IndiumV3, Main, Repository, bibRecord, 000030

Surface state and optical property of sulfur passivated InP

Identifieur interne : 000030 ( Main/Repository ); précédent : 000029; suivant : 000031

Surface state and optical property of sulfur passivated InP

Auteurs : RBID : Pascal:14-0035836

Descripteurs français

Pascal (Inist)
- Etat surface, Caractéristique optique, Propriété optique, Photoluminescence, Emission latérale, Spectre photoélectron RX, Couche épaisse, Transmission lumière, Passivation, Soufre, Phosphure d'indium, Composé binaire, 7867, InP.
Wicri :
- concept : Soufre.

English descriptors

KwdEn :
- Binary compounds, Edge emission, Indium phosphide, Light transmission, Optical characteristic, Optical properties, Passivation, Photoluminescence, Sulfur, Surface states, Thick films, X-ray photoelectron spectra.

Abstract

We report photoluminescence (PL) of indium phosphide (InP) surface passivated by sulfur (S). A three-fold enhancement of band edge emission from the bulk InP was observed after the InP was passivated by ammonium sulfide ((NH₄)₂S) solution for 10 min. X-ray photoelectron spectroscopy measurements indicate that the oxide at InP surface is removed after being sulfurized in (NH₄)₂S solution. However, the enhancement significantly decreases for a longer treatment time, which is maybe due to a thick S layer deposited at the InP surface resulting in low light transmission.

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Le document en format XML

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<author><name>ZHIPENG WEI</name>
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<author><name>YONGFENG LI</name>
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<author><name>HAIFENG ZHAO</name>
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<author><name>XUAN FANG</name>
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<author><name>JILONG TANG</name>
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<author><name>DAN FANG</name>
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<author><name>LIJUAN SUN</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Yunnan forestry Technological College, No.1 Jindian, Panlong District</s1>
<s2>Kunming 650224, Yunnan Province</s2>
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<author><name>GUOJUN LIU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Changchun University of Science and Technology, 7186 Wei-Xing Road</s1>
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<author><name>BIN YAO</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Key Laboratory of Physics and Technology for Advanced Batteries, Ministry of Education, College of Physics, Jilin University</s1>
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<author><name>XIAOHUI MA</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Changchun University of Science and Technology, 7186 Wei-Xing Road</s1>
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<publicationStmt><idno type="inist">14-0035836</idno>
<date when="2014">2014</date>
<idno type="stanalyst">PASCAL 14-0035836 INIST</idno>
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<title level="j" type="abbreviated">Mater. sci. semicond. process.</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term>
<term>Edge emission</term>
<term>Indium phosphide</term>
<term>Light transmission</term>
<term>Optical characteristic</term>
<term>Optical properties</term>
<term>Passivation</term>
<term>Photoluminescence</term>
<term>Sulfur</term>
<term>Surface states</term>
<term>Thick films</term>
<term>X-ray photoelectron spectra</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etat surface</term>
<term>Caractéristique optique</term>
<term>Propriété optique</term>
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<term>Phosphure d'indium</term>
<term>Composé binaire</term>
<term>7867</term>
<term>InP</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Soufre</term>
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<front><div type="abstract" xml:lang="en">We report photoluminescence (PL) of indium phosphide (InP) surface passivated by sulfur (S). A three-fold enhancement of band edge emission from the bulk InP was observed after the InP was passivated by ammonium sulfide ((NH<sub>4</sub>
)<sub>2</sub>
S) solution for 10 min. X-ray photoelectron spectroscopy measurements indicate that the oxide at InP surface is removed after being sulfurized in (NH<sub>4</sub>
)<sub>2</sub>
S solution. However, the enhancement significantly decreases for a longer treatment time, which is maybe due to a thick S layer deposited at the InP surface resulting in low light transmission.</div>
</front>
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Surface state and optical property of sulfur passivated InP

Surface state and optical property of sulfur passivated InP

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